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Journal Articles

Thermal stability of deep-level defects in high-purity semi-insulating 4H-SiC substrate studied by admittance spectroscopy

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Materials Science Forum, 858, p.357 - 360, 2016/05

https://doi.org/10.4028/www.scientific.net/MSF.858.357